FDMC6675BZ/D
MOSFET – P-Channel
(edit with the Customer Reassurance module)
(edit with the Customer Reassurance module)
(edit with the Customer Reassurance module)
Description
The FDMC6675BZ has been designed to minimize losses in load
switch applications. Advancements in both silicon and package
technologies have been combined to offer the lowest RDS(on) and ESD
protection.
Features
• Max RDS(on) = 14.4 m at VGS = −10 V, I D = −9.5 A
• Max RDS(on) = 27.0 m at VGS = −4.5 V, I D = −6.9 A
• HBM ESD Protection Level of 8 kV Typical (Note 3)
• Extended VGSS Range (−25 V) for Battery Applications
• High Performance Trench Technology for Extremely Low RDS(on)
• High Power and Current Handling Capability
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Load Switch in Notebook and Server
• Notebook Battery Pack Power Management