MDD2601
0,50 €
Bez PDV-a
Type Designator: MDD2601
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 60 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: TO252
Security policy
(edit with the Customer Reassurance module)
Delivery policy
(edit with the Customer Reassurance module)
Return policy
(edit with the Customer Reassurance module)
Type Designator: MDD2601
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 60 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: TO252
10 Stavke
Komentari (0)
No customer reviews for the moment.
Type Designator: MDD2601
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 60 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: TO252