FGH40T120SMD

FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
July 2013
©2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Notes:
1. Vcc = 600 V,VGE = 15 V, I C = 160 A, RG = 10 Ω , Inductive Load
2. Limited by Tjmax
Symbol Description Ratings Unit
V CES Collector to Emitter Voltage 1200 V
V GES
Gate to Emitter Voltage ±25 V
Transient Gate to Emitter Voltage ±30 V
I C
Collector Current @ TC = 25 o C 80 A
Collector Current @ T C = 100 o C 40 A
I LM (1) Clamped Inductive Load Current @ TC = 25 o C 160 A
I CM (2) Pulsed Collector Current 160 A
I F Diode Continuous Forward Current @ TC = 25 o C 80 A
Diode Continuous Forward Current @ TC = 100 o C 40 A
I FM Diode Maximum Forward Current 240 A
P D
Maximum Power Dissipation @ TC = 25 o C 555 W
Maximum Power Dissipation @ TC = 100 o C 277 W
TJ Operating Junction Temperature -55 to +175 o C
Tstg Storage Temperature Range -55 to +175 o C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 o C
Symbol Parameter Typ. Max. Unit
RJC (IGBT) Thermal Resistance, Junction to Case -- 0.27 o C/W
RJC (Diode) Thermal Resistance, Junction to Case -- 0.89 o C/W
RJA Thermal Resistance, Junction to Ambient -- 40 o C/W
G
C
E
COLLECTOR
(FLANGE)
E C G
FGH40T120SMD / FGH40T120SMD_F155
1200 V, 40 A FS Trench IGBT
Features
• FS Trench Technology, Positive Temperature Coefficient
• High Speed Switching
• Low Saturation Voltage: V CE(sat) =1.8 V @ IC = 40 A
• 100% of the Parts tested for I LM (1)
• High Input Impedance