FDS6670AS

General Description
The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge.

The FDS6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
Applications
DC/DC converter
Low side notebook
Features
13.5 A, 30 V. R DS(ON) max= 9.0 m @ V GS = 10 V
R DS(ON) max= 11.5 m @ V GS = 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (27nC typical)
High performance trench technology for extremely low
R DS(ON) and fast switching
High power and current handling capability

Absolute Maximum Ratings TA =25 o
C unless otherwise noted
Symbol Parameter Ratings Units
V DSS Drain-Source Voltage 30 V
V GSS Gate-Source Voltage 20 V
I D Drain Current – Continuous (Note 1a) 13.5 A
– Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5

TJ , TSTG Operating and Storage Junction Temperature Range –55 to +150 C
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W
RJC Thermal Resistance, Junction-to-Case (Note 1) 25 C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6670AS FDS6670AS 13’’ 12mm 2500 units

FDS6670AS 30V N-Channel PowerTrench® SyncFET™
RoHS Compliant